transistor (npn) features z high dc current gain. z high emitter-base voltage. z low v ce (sat) . marking: bbv,bbw maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 25 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 12 v i c collector current -continuous 0.5 a p c collector power dissipation 0.25 w tj junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 25 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 12 v collector cut-off current i cbo v cb =20 v, i e =0 0.5 a emitter cut-off current i ebo v eb =10v,i c =0 0.5 a dc current gain h fe v ce =3v, i c =10ma 820 2700 collector-emitter saturation voltage v ce (sat) i c = 500ma, i b =20 ma 0.4 v transition frequency f t v ce =10v, i c =50ma f= 100mhz 350 mhz output capacitance c ob v cb =10v,i e =0,f=1mhz 8 pf on resistance r (on) v in =0.1v(rms),i b =1ma, f=1kh z 0.8 classification of h fe rank v w range 820-1800 1200-2700 sot-23 1. base 2.emitter 3.collector 2SD2114 1 www.htsemi.com semiconductor jinyu
2SD2114 2 www.htsemi.com semiconductor jinyu
2SD2114 3 www.htsemi.com semiconductor jinyu
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